CVD Silicon Carbide

Morgan Advanced Ceramics Inc, CVD Materials manufactures SiC plates up to 13" x 20" with a standard thickness of 0.250". Extensive plate production assures the customer that common sizes are available for immediate delivery. Additional sizes and thicknesses are also available. All components are machined on-site using computer-numeric controls for accuracy and reliability.

Ultra-pure Performance SiC and Low Resistivity Performance SiC outlasts conventional materials -- including other forms of silicon carbide -- in today's extremely hostile manufacturing environments. The outstanding properties of Performance SiC include superior chemical and erosion resistance with phenomenal thermal properties. Utilizing a state-of-the-art chemical vapor deposition manufacturing system, Morgan Advanced Ceramics Inc, CVD Materials produces chemical vapor deposition (CVD) silicon carbide that is superior to any silicon carbide available today.

The High-Productivity Advantages Of Performance SiC

Extend the life of your manufacturing equipment, reduce downtime, eliminate contamination and increase yields – specify Performance SiC.

Benefits

Outperforms traditional materials in chemical and plasma environments Lower costs of ownership Non-particle generating	Faster throughputs and cycle times Higher yields Less downtime
Features
Ultra-pure 99.9995% Unparalleled wear and corrosion resistance Outstanding thermal conductivity Thermal shock resistant Phenomenal thermal conductivity Low CTE	Dimensional stability One of the best stiffness to weight ratios Fine grained microstructure Non-porous Theoretically dense Mirror-like surface finishes

Morgan Advanced Ceramics Inc, CVD Materials developed the CVD silicon carbide manufacturing technology to supply the high performance products required by the semiconductor industry. Our Performance SiC offers purity, stiffness, and dimensional stability ideal for the most demanding manufacturing environments.

CVD silicon carbide traditionally has been used in semiconductor processing applications, such as RTP and oxide etch chamber components, that can take advantage of the excellent thermal shock resistance of silicon carbide and its resistance to erosion by high energy plasmas.

Performance SiC, conductive CVD silicon carbide gives equipment manufacturers new options for materials to use in the processing chamber. The benefits of CVD silicon carbide—purity, stiffness, chemical and oxidation resistance, ability to withstand thermal shock, and dimensional stability—now combine with low electrical resistance, opening up the door to new ways to process wafers.

Heating elements and susceptors made of low resistivity Performance SiC may improve heating uniformity inside the processing chamber. Other ways it may benefit the industry include chambers or liners with improved in situ clean uniformities, sputter targets, and all types of electrodes. Since CVD silicon carbide can be used in very thin sections, its low mass can improve throughput while it improves the use of space in crowded processing tools.

We believe low resistivity CVD silicon carbide will revolutionize the deposition and etch processes. With a combination of suitability for use in a wafer processing chamber and its electrical conductivity, this material opens up new ways to get energy to the wafer. Low resistivity Performance SiC is theoretically dense, intrinsically pure, has a high degree of chemical and process inertness, and has a bulk electrical resistivity of 0.012 ohm-cm.

Morgan Advanced Ceramics Inc, CVD Materials’ low resistivity silicon carbide has consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings, heaters, electrostatic chucks, or any application that requires electrical conductivity, wear resistance, and thermal shock resistance.

Download Performance SiC Datasheet

Properties of Performance SiC

Physical

Thermal

Electrical

Chemical