Chemical Properties of Performance SiC CVD Silicon Carbide

Chemical Analysis Of Performance SiC

Performance SiC is chemically vapor deposited silicon carbide which is theoretically dense, pure and chemically inert. It is an advanced ceramic material designed to be used in high temperature, corrosive environments. Morgan Advanced Ceramics has engineered the electrical properties of Performance SiC to provide material from less than 1 ohm-cm to greater than 10⁴ ohm-cm.

Typical GDMS Report for CVD SiC

Element	Concentration (ppm wt)	Element	Concentration (ppm wt)
Li	<0.01	Ag	<0.05
B	<1.5	Cd	<0.1
Be	<0.01	In	<0.1
C	Major	Sn	<0.1
F	<1	Sb	<0.1
Na	<1	Te	<0.1
Mg	<0.5	I	<0.05
Al	<0.2	Cs	<0.01
Si	Major	Ba	<0.01
P	<0.2	La	<0.01
S	<0.4	Ce	<0.01
Cl	<3	Pr	<0.01
K	<0.1	Nd	<0.01
Ca	<2	Sm	<0.01
Sc	<0.05	Eu	<0.01
Ti	<0.01	Gd	<0.01
V	<0.01	Tb	<0.01
Cr	<0.1	Dy	<0.01
Mn	<0.01	Ho	<0.01
Fe	<0.1	Er	<0.01
Co	<0.01	Tm	<0.01
Ni	<0.05	Yb	<0.01
Cu	<0.05	Lu	<0.01
Zn	<0.1	Hf	<0.05
Ga	<0.05	Ta	<0.5
Ge	<0.2	W	<0.05
As	<0.05	Re	<0.01
Se	<0.05	Os	<0.01
Br	<0.1	Ir	<0.01
Rb	<0.05	Pt	<0.01
Sr	<0.01	Au	<0.1
Y	<0.01	Hg	<0.1
Zr	<0.01	Ti	<0.01
Nb	<0.01	Pb	<0.05
Mo	<0.05	Bi	<0.01
Ru	<0.01	Th	<0.03
Rh	<0.01	U	<0.01
Pd	<0.05

Properties determined by glow discharge mass spectroscopy.

Properties of Performance SiC

Physical

Thermal

Electrical

Chemical

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It comprises Morgan Advanced Ceramics and Morgan Electro Ceramics.